ELECTRIC PROPERTIES OF UNIPOLAR GAAS STRUCTURES WITH ULTRATHIN TRIANGULAR BARRIERS
- Author
- GOSSARD AC; KAZARINOV RF; LURYI S; WIEGMANN W
BELL LAB./MURRAY HILL NJ 07974/USA - Source
- APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 9; PP. 832-833; BIBL. 11 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- STRUCTURE MULTIJONCTION SEMICONDUCTEUR INTRINSEQUE GALLIUM ARSENIURE CARACTERISTIQUE COURANT TENSION BARRIERE POTENTIEL CARACTERISTIQUE FONCTIONNEMENT BASSE TEMPERATURE HAUTE TEMPERATURE CONFIGURATION TRIANGULAIRE STRUCTURE NIP+IN ELECTRONIQUE
- Keyword (en)
- MULTIJUNCTION STRUCTURE INTRINSIC SEMICONDUCTOR GALLIUM ARSENIDES VOLTAGE CURRENT CURVE POTENTIAL BARRIER PERFORMANCE CHARACTERISTIC LOW TEMPERATURE HIGH TEMPERATURE ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL82X0268678
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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