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A NOVEL NORMALLY-OFF CAMEL DIODE GATE GAAS FIELD-EFFECT TRANSISTOR

Author
DRUMMOND TJ; WANG T; KOPP W; MORKOC H; THORNE RE; SU SL
UNIV. ILLINOIS, DEP. ELECTRIC. ENG./URBANA IL 61801/USA
Source
APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 9; PP. 834-836; BIBL. 13 REF.
Document type
Article
Language
English
Keyword (fr)
TRANSISTOR EFFET CHAMP GRILLE GALLIUM ARSENIURE FABRICATION ANALYSE FONCTIONNEMENT PREPARATION DEPOT METHODE PHASE VAPEUR CONDENSATION FAISCEAU MOLECULAIRE DIODE CHAMEAU ELECTRONIQUE
Keyword (en)
FIELD EFFECT TRANSISTOR GRATE GALLIUM ARSENIDES MANUFACTURING OPERATION STUDY PREPARATION DEPOSITION GROWTH FROM VAPOR MOLECULAR BEAM CONDENSATION ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL82X0273005

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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