INTERFACE STATE GENERATION IN THE SI-SIO2 SYSTEM BY PHOTOINJECTING ELECTRONS FROM AN AL FIELD PLATE
- Author
- PANG S; LYON SA; JOHNSON WC
PRINCETON UNIV., DEP. ELECTR. ENG. COMPUTER SCI./PRINCETON NJ/USA - Source
- APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 8; PP. 709-711; BIBL. 17 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- STRUCTURE MOS SILICIUM SILICIUM OXYDE ETAT ELECTRONIQUE INTERFACE GENERATION INJECTION PORTEUR CHARGE PHOTOINJECTION DENSITE ETAT CONTACT ELECTRIQUE CONTACT OXYDE SEMICONDUCTEUR ELECTRONIQUE PHYSIQUE SOLIDE
- Keyword (en)
- MOS STRUCTURE SILICON SILICON OXIDES INTERFACE ELECTRON STATE GENERATION CHARGE CARRIER INJECTION DENSITY OF STATES ELECTRIC CONTACT SEMICONDUCTOR OXIDE CONTACT ELECTRONICS SOLID PHYSICS
- Keyword (es)
- ELECTRONICA FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Electronics Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL82X0275202
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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