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A TECHNIQUE FOR RAPIDLY ALTERNATING BORON AND ARSENIC DOPING IN ION-IMPLANTED SILICON MOLECULAR BEAM EPITAXY

Author
SWARTZ RG; MCFEE JH; VOSHCHENKOV AW; FINEGAN SN; OTA Y
BELL LAB./HOLMDEL NJ 07733/USA
Source
APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 3; PP. 239-241; BIBL. 4 REF.
Document type
Article
Language
English
Keyword (fr)
ETUDE EXPERIMENTALE NON METAL MOYENNE ENERGIE COUCHE EPITAXIQUE CONDENSATION FAISCEAU MOLECULAIRE DEPOT PREPARATION METHODE PHASE VAPEUR TRANSISTOR IMPLANTATION ION IRRADIATION ION CROISSANCE CRISTALLINE SILICIUM IMPURETE BORE IMPURETE ARSENIC BORE ION ATOMIQUE ARSENIC ION ATOMIQUE CRISTALLOGRAPHIE ELECTRONIQUE
Keyword (en)
EXPERIMENTAL STUDY NON METAL INTERMEDIATE ENERGY EPITAXIAL FILM MOLECULAR BEAM CONDENSATION DEPOSITION PREPARATION GROWTH FROM VAPOR TRANSISTOR ION IMPLANTATION ION IRRADIATION CRYSTAL GROWTH SILICON CRISTALLOGRAPHY ELECTRONICS
Keyword (es)
CRISTALOGRAFIA ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL82X0275285

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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