THE EFFECT OF COLLISIONAL BROADENING ON MONTE CARLO SIMULATIONS OF HIGH-FIELD TRANSPORT IN SEMICONDUCTOR DEVICES
- Author
- CAPASSO F; PEARSALL TP; THORNBER KK
BELL LABORATORIES/MURRAY HILL NJ 07974/USA - Source
- ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 11; PP. 295-297; BIBL. 16 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- TRANSISTOR EFFET CHAMP DIFFUSION CHAMP FORT DISPOSITIF SEMICONDUCTEUR METHODE MONTE CARLO SIMULATION ORDINATEUR STRUCTURE BANDE GALLIUM ARSENIURE ELECTRONIQUE
- Keyword (en)
- FIELD EFFECT TRANSISTOR DIFFUSION STRONG FIELD SEMICONDUCTOR DEVICE MONTE CARLO METHOD COMPUTER SIMULATION BAND STRUCTURE GALLIUM ARSENIDES ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL82X0277303
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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