CARACTERISATION DES TRANSISTORS A EFFET DE CHAMP GAAS HYPERFREQUENCE DE PUISSANCE EN REGIME NON LINEAIRE
- Other title
- CHARACTERISTICS OF HYPERFREQUENCY GAAS FIELD EFFECT POWER TRANSISTORS IN NONLINEAR OPERATING MODE (en)
- Author
- GOUDELIS MICHEL
ECOLE NATIONALE SUPERIEURE DES TELECOMMUNICATIONS/PARIS/FRA - Source
- FRA; PARIS: ENST; DA. 1981; ENST-E/81001; 205 P.-PL.; 30 CM; BIBL. 81 REF.; DEPARTEMENT ELECTRONIQUE ET PHYSIQUE;[; TH. DOCT.-ING.: PHYS. APPL. TELECOMMUN./PARIS, EC. NATIONAL SUPERIEURE TELECOMMUNICATIONS/1981]
- Document type
- Thesis
- Language
- French
- Keyword (fr)
- TRANSISTOR EFFET CHAMP TRANSISTOR HYPERFREQUENCE GRANDE PUISSANCE ANALYSE FONCTIONNEMENT GALLIUM ARSENIURE REGIME NON LINEAIRE OPTIMISATION AMPLIFICATEUR PUISSANCE CONCEPTION ELECTRONIQUE
- Keyword (en)
- FIELD EFFECT TRANSISTOR MICROWAVE TRANSISTOR HIGH POWER OPERATION STUDY GALLIUM ARSENIDES NON LINEAR CONDITION OPTIMIZATION POWER AMPLIFIER DESIGN ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL82X0306877
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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Istex access
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Europe PubMed Central access
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