COMPARISON OF INTERFACE STATE DENSITY IN MIS STRUCTURE DEDUCED FROM DLTS AND TERMAN MEASUREMENTS
- Author
- ROSENCHER E; BOIS D
CENT. NATIONAL ETUDES TELECOMMUN./MEYLAN 38240/FRA - Source
- ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 3; PP. 545-546; BIBL. 10 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- STRUCTURE MIS ETAT ELECTRONIQUE INTERFACE DENSITE ETAT SPECTROMETRIE TRANSITOIRE NIVEAU PROFOND PIEGEAGE PORTEUR CHARGE CARACTERISTIQUE COURANT TENSION HAUTE FREQUENCE METHODE MESURE ELECTRONIQUE
- Keyword (en)
- MIS STRUCTURE INTERFACE ELECTRON STATE DENSITY OF STATES DEEP LEVEL TRANSIENT SPECTROSCOPY CHARGE CARRIER TRAPPING VOLTAGE CURRENT CURVE HIGH FREQUENCY MEASUREMENT METHOD ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL82X0329104
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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