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COMPARISON OF INTERFACE STATE DENSITY IN MIS STRUCTURE DEDUCED FROM DLTS AND TERMAN MEASUREMENTS

Author
ROSENCHER E; BOIS D
CENT. NATIONAL ETUDES TELECOMMUN./MEYLAN 38240/FRA
Source
ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 3; PP. 545-546; BIBL. 10 REF.
Document type
Article
Language
English
Keyword (fr)
STRUCTURE MIS ETAT ELECTRONIQUE INTERFACE DENSITE ETAT SPECTROMETRIE TRANSITOIRE NIVEAU PROFOND PIEGEAGE PORTEUR CHARGE CARACTERISTIQUE COURANT TENSION HAUTE FREQUENCE METHODE MESURE ELECTRONIQUE
Keyword (en)
MIS STRUCTURE INTERFACE ELECTRON STATE DENSITY OF STATES DEEP LEVEL TRANSIENT SPECTROSCOPY CHARGE CARRIER TRAPPING VOLTAGE CURRENT CURVE HIGH FREQUENCY MEASUREMENT METHOD ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL82X0329104

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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