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FORMATION OF BETA -SIC LAYERS ON HEATED SILICON WAFERS EXPOSED TO SUBLIMED CARBON

Author
DURUPT P; GAUTHIER JP; ROGER JA; PIVOT J
UNIV. CLAUDE BERNARD LYON I, LAB. PHYS. ELECTRON. II/VILLEURBANNE 69622/FRA
Source
THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 85; NO 2; PP. L191-L193; BIBL. 9 REF.
Document type
Article
Language
English
Keyword (fr)
COMPOSE MINERAL SUBLIMATION CINETIQUE TEMPERATURE SUPPORT DIFFRACTION ELECTRON ETUDE EXPERIMENTALE COUCHE MINCE CROISSANCE CRISTALLINE SILICIUM CARBURE PHASE BETA SUPPORT SI CRISTALLOGRAPHIE
Keyword (en)
INORGANIC COMPOUND SUBLIMATION KINETICS TEMPERATURE SUPPORT ELECTRON DIFFRACTION EXPERIMENTAL STUDY THIN FILM CRYSTAL GROWTH SILICON CARBIDES CRISTALLOGRAPHY
Keyword (es)
CRISTALOGRAFIA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL82X0331236

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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