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DETERMINATION OF THE RADIATION DAMAGE IN ARSENIC-IMPLANTED SILICON BY PROFILING THE OXIDE GROWTH RATE

Author
KISIELEWICZ M; WAGNER C
M. CURIE-SKLODOWSKA UNIV., INST. PHYS./LUBLIN 20031/POL
Source
THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 85; NO 1; PP. 1-6; BIBL. 12 REF.
Document type
Article
Language
English
Keyword (fr)
NON METAL OXYDATION DISTRIBUTION SPATIALE ENERGIE ETUDE EXPERIMENTALE IMPLANTATION ION DEFAUT IRRADIATION IRRADIATION ION SILICIUM ARSENIC ION ATOMIQUE CRISTALLOGRAPHIE
Keyword (en)
NON METAL OXIDATION SPATIAL DISTRIBUTION ENERGY EXPERIMENTAL STUDY ION IMPLANTATION IRRADIATION DEFECT ION IRRADIATION SILICON CRISTALLOGRAPHY
Keyword (es)
CRISTALOGRAFIA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL82X0331237

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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