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ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS

Author
ITO T; NAKAMURA T; ISHIKAWA H
FUJITSU LABORATORIES LTD./KAWASAKI 211/JPN
Source
IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 2; PP. 128-132; BIBL. 21 REF.
Document type
Article
Language
English
Keyword (fr)
FABRICATION MICROELECTRONIQUE TECHNOLOGIE CIRCUIT VLSI COUCHE MINCE GRILLE TEMPERATURE STRUCTURE MOS TRANSISTOR EFFET CHAMP TRANSISTOR EFFET CHAMP GRILLE ISOLEE INTERFACE SOLIDE SOLIDE SILICIUM IV OXYDE NITRURE TRAITEMENT THERMIQUE ELECTRONIQUE
Keyword (en)
MICROELECTRONIC FABRICATION TECHNOLOGY VLSI CIRCUIT THIN FILM GRATE TEMPERATURE MOS STRUCTURE FIELD EFFECT TRANSISTOR ISOLATED GATE FIELD EFFECT TRANSISTOR SOLID SOLID INTERFACE SILICON IV OXIDES NITRIDES HEAT TREATMENT ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL82X0342075

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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