COMPOSITE TISI2/N+ POLY-SI LOW-RESISTIVITY GATE ELECTRODE AND INTERCONNECT FOR VLSI DEVICE TECHNOLOGY
- Author
- WANG KL; HOLLOWAY TC; PINIZZOTTO RF; SOBCZAK ZP; HUNTER WR; TASCH AF JR
TEXAS INSTRUMENTS INCORP./DALLAS TX 75265/USA - Source
- IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 2; PP. 177-183; BIBL. 8 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- FABRICATION MICROELECTRONIQUE TECHNOLOGIE CIRCUIT VLSI TRACE ALIGNEMENT INTERCONNEXION GRILLE TRANSISTOR EFFET CHAMP TRANSISTOR MOS RESISTANCE CONTACT TITANE SILICIURE SILICIUM ALUMINIUM ELECTRONIQUE
- Keyword (en)
- MICROELECTRONIC FABRICATION TECHNOLOGY VLSI CIRCUIT ALIGNING (SITING) INTERCONNECTION GRATE FIELD EFFECT TRANSISTOR MOS TRANSISTOR CONTACT RESISTANCE TITANIUM SILICIDES SILICON ALUMINIUM ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL82X0342081
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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