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A NEW DOPING TECHNIQUE WITHOUT SIO2 PATTERNING USING AN INORGANIC PHOTORESIST

Author
YOSHIKAWA A; OCHI O; TAKEDA A; MIZUSHIMA Y
NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORP./MUSASHINO-SHI TOKYO 180/JPN
Source
J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 5; PP. 1074-1077; BIBL. 10 REF.
Document type
Article
Language
English
Keyword (fr)
FABRICATION MICROELECTRONIQUE DOPAGE RESIST PHOTORESIST DIFFUSION DIODE JONCTION P+ N JONCTION N+ P TRANSISTOR STRUCTURE MULTIJONCTION TRANSISTOR DIFFUSION COMPOSE MINERAL GERMANIUM SELENIUM ELECTRONIQUE
Keyword (en)
MICROELECTRONIC FABRICATION DOPING RESIST PHOTORESIST DIFFUSION DIODE P+ N JUNCTION N+ P JUNCTION TRANSISTOR MULTIJUNCTION STRUCTURE DIFFUSION TRANSISTOR INORGANIC COMPOUND GERMANIUM SELENIUM ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL82X0349362

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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