ROOM TEMPERATURE FORMATION OF SI-NITRIDE FILMS BY LOW ENERGY NITROGEN ION IMPLANTATION INTO SILICON
- Author
- HEZEL R; LIESKE N
UNIV. ERLANGEN-NUERNBERG, INST. WERKSTOFFWISS. VI/ERLANGEN 8520/DEU - Source
- J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 2; PP. 379-383; BIBL. 15 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- TEMPERATURE AMBIANTE NITRURATION NON METAL NON METAL COMPOSE ETUDE EXPERIMENTALE SPECTROMETRIE AUGER SPECTROMETRIE PERTE ENERGIE SPECTROMETRIE ELECTRON COMPOSITION CHIMIQUE IRRADIATION ION DISTRIBUTION CONCENTRATION FORMATION IMPLANTATION ION COUCHE MINCE ETAT AMORPHE SILICIUM SILICIUM NITRURE AZOTE ION ATOMIQUE SUPPORT SI CRISTALLOGRAPHIE
- Keyword (en)
- ROOM TEMPERATURE NITRIDING NON METAL NON METAL COMPOUNDS EXPERIMENTAL STUDY AUGER ELECTRON SPECTROMETRY ENERGY LOSS SPECTROMETRY ELECTRON SPECTROMETRY CHEMICAL COMPOSITION ION IRRADIATION CONCENTRATION DISTRIBUTION FORMATION ION IMPLANTATION THIN FILM AMORPHOUS STATE SILICON SILICON NITRIDES CRISTALLOGRAPHY
- Keyword (es)
- CRISTALOGRAFIA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL82X0353160
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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