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DRY ETCHING DURABILITY OF POSITIVE ELECTRON RESISTS

Author
HARADA K
NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORP./IBARAKI 31911/JPN
Source
J. APPL. POLYM. SCI.; ISSN 0021-8995; USA; DA. 1981; VOL. 26; NO 10; PP. 3395-3408; BIBL. 28 REF.
Document type
Article
Language
English
Keyword (fr)
ELECTRORESIST RESIST POSITIF GRAVURE RELATION STRUCTURE PROPRIETE POLYMERE ELECTRONIQUE FABRICATION MICROELECTRONIQUE GRAVURE SEC EMPLOI DE CHIMIE MACROMOLECULAIRE POLYMERES ELECTRONIQUE
Keyword (en)
ELECTRORESIST POSITIVE RESIST ENGRAVING STRUCTURE PROPERTY RELATION POLYMER ELECTRONICS MICROELECTRONIC FABRICATION RESIST MACROMOLECULAR CHEMISTRY POLYMERS ELECTRONICS
Keyword (es)
QUIMICA MACROMOLECULAR POLIMEROS ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D09 Physicochemistry of polymers

Discipline
Electronics Physical chemistry of polymers
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL82X0357638

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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