ELECTRICAL CHARACTERISTICS OF HEAVILY ARSENIC AND PHOSPHORUS DOPED POLYCRYSTALLINE SILICON
- Author
- MUROTA J; SAWAI T
NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORP./TOKYO 180/JPN - Source
- J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 5; PP. 3702-3708; BIBL. 24 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- NON METAL CONCENTRATION IMPURETE TRAITEMENT THERMIQUE TEMPERATURE RESISTIVITE ELECTRIQUE DIMENSION GRAIN CONCENTRATION PORTEUR CHARGE ETUDE EXPERIMENTALE DEPOT CHIMIQUE PHASE VAPEUR POLYCRISTAL CONDUCTIVITE ELECTRIQUE SEGREGATION IMPURETE COUCHE MINCE DOPAGE SILICIUM IMPURETE ARSENIC IMPURETE PHOSPHORE CRISTALLOGRAPHIE PHYSIQUE SOLIDE
- Keyword (en)
- NON METAL IMPURITY DENSITY HEAT TREATMENT TEMPERATURE ELECTRIC RESISTIVITY GRAIN SIZE CHARGE CARRIER CONCENTRATION EXPERIMENTAL STUDY CHEMICAL VAPOR DEPOSITION POLYCRYSTAL ELECTRICAL CONDUCTIVITY IMPURITY SEGREGATION THIN FILM DOPING SILICON CRISTALLOGRAPHY SOLID PHYSICS
- Keyword (es)
- CRISTALOGRAFIA FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL82X0358511
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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