A DESIGN CONSIDERATION ON GAAS MESFET STRUCTURE FOR UHF APPLICATIONS
- Author
- NAKATANI M; IRIE M; IGI S; KUSUNOKI K
MITSUBISHI ELECTRIC CORP./HYOGO 664/JPN - Source
- IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 5; PP. 918-921; BIBL. 10 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- TRANSISTOR EFFET CHAMP TRANSISTOR EFFET CHAMP BARRIERE SCHOTTKY CONCEPTION GALLIUM ARSENIURE APPLICATION HYPERFREQUENCE ANALYSE FONCTIONNEMENT IMPEDANCE ELECTRIQUE FIGURE BRUIT ELECTRONIQUE
- Keyword (en)
- FIELD EFFECT TRANSISTOR METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR DESIGN GALLIUM ARSENIDES APPLICATION MICROWAVE OPERATION STUDY ELECTRICAL IMPEDANCE NOISE FIGURE ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL82X0371590
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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