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A DESIGN CONSIDERATION ON GAAS MESFET STRUCTURE FOR UHF APPLICATIONS

Author
NAKATANI M; IRIE M; IGI S; KUSUNOKI K
MITSUBISHI ELECTRIC CORP./HYOGO 664/JPN
Source
IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 5; PP. 918-921; BIBL. 10 REF.
Document type
Article
Language
English
Keyword (fr)
TRANSISTOR EFFET CHAMP TRANSISTOR EFFET CHAMP BARRIERE SCHOTTKY CONCEPTION GALLIUM ARSENIURE APPLICATION HYPERFREQUENCE ANALYSE FONCTIONNEMENT IMPEDANCE ELECTRIQUE FIGURE BRUIT ELECTRONIQUE
Keyword (en)
FIELD EFFECT TRANSISTOR METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR DESIGN GALLIUM ARSENIDES APPLICATION MICROWAVE OPERATION STUDY ELECTRICAL IMPEDANCE NOISE FIGURE ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL82X0371590

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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