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THERMAL BEHAVIOR OF B, P AND AS ATOMS IN SUPERSATURED SI PRODUCED BY ION IMPLANTATION AND PULSED-LASER ANNEALING

Author
ITOH K; SASAKI Y; MITSUISHI T; MIYAO M; TAMURA M
HITACHI LTD., CENT. RES. LAB./TOKYO 185/JPN/(4 AUT.)
Source
JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 5; PART. 2; PP. 245-247; BIBL. 13 REF.
Document type
Article
Language
English
Keyword (fr)
ETUDE EXPERIMENTALE NON METAL MONOCRISTAL TRAITEMENT THERMIQUE RECUIT FAISCEAU LASER TEMPERATURE CONCENTRATION PORTEUR CHARGE DOSE RAYONNEMENT MICROSCOPIE ELECTRONIQUE TRANSMISSION CONDUCTIVITE ELECTRIQUE EFFET HALL IMPLANTATION ION IMPURETE SILICIUM IMPURETE BORE IMPURETE PHOSPHORE IMPURETE ARSENIC CRISTALLOGRAPHIE PHYSIQUE SOLIDE
Keyword (en)
EXPERIMENTAL STUDY NON METAL SINGLE CRYSTAL HEAT TREATMENT ANNEALING LASER BEAM TEMPERATURE CHARGE CARRIER CONCENTRATION RADIATION DOSE TRANSMISSION ELECTRON MICROSCOPY ELECTRICAL CONDUCTIVITY HALL EFFECT ION IMPLANTATION IMPURITY SILICON CRISTALLOGRAPHY SOLID PHYSICS
Keyword (es)
CRISTALOGRAFIA FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL82X0371668

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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