ELECTRICAL PROPERTIES OF LINE DEFECTS IN THIN ZONE-RECRYSTALLIZED SILICON FILMS ON SILICON DIOXIDE
- Author
- MABY EW; ANTONIADIS DA
MASSACHUSSETS INST. TECHNOL., DEP. ELECTR. ENG. COMPUTER SCI./CAMBRIDGE MA 02139/USA - Source
- APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 8; PP. 691-693; BIBL. 6 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- ETUDE EXPERIMENTALE NON METAL RECRISTALLISATION FUSION ZONE DEFAUT LINEAIRE JOINT GRAND ANGLE TRANSISTOR EFFET CHAMP TRANSISTOR MOS ANALYSE FONCTIONNEMENT CONDUCTIVITE ELECTRIQUE CRISTALLISATION DEFAUT CRISTALLIN COUCHE MINCE SILICIUM MODE APPAUVRISSEMENT SUPPORT SIO2 CRISTALLOGRAPHIE ELECTRONIQUE PHYSIQUE SOLIDE
- Keyword (en)
- EXPERIMENTAL STUDY NON METAL RECRYSTALLIZATION ZONE MELTING LINEAR DEFECT HIGH ANGLE BOUNDARY FIELD EFFECT TRANSISTOR MOS TRANSISTOR OPERATION STUDY ELECTRICAL CONDUCTIVITY CRYSTALLIZATION CRYSTAL DEFECT THIN FILM SILICON CRISTALLOGRAPHY ELECTRONICS SOLID PHYSICS
- Keyword (es)
- CRISTALOGRAFIA ELECTRONICA FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Electronics Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL82X0378066
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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