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DEFECT STATES IN DOPED AND COMPENSATED A-SI:H

Author
STREET RA; BIEGELSEN DK; KNIGHTS JC
XEROX PALO ALTO RESEARCH CENTER/PALO ALTO CA 94304/USA
Source
PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 2; PP. 969-984; BIBL. 32 REF.
Document type
Article
Language
English
Keyword (fr)
ETAT AMORPHE NIVEAU DEFAUT CRISTALLIN PHOTOLUMINESCENCE DECLIN LUMINESCENCE DOPAGE HYDROGENATION SPECTROMETRIE SIMS RESONANCE PARAMAGNETIQUE ELECTRONIQUE FACTEUR G COMPENSATION ABSORPTION OPTIQUE CONDUCTIVITE ELECTRIQUE DENSITE ETAT SILICIUM IMPURETE HYDROGENE IMPURETE BORE IMPURETE PHOSPHORE PHYSIQUE SOLIDE
Keyword (en)
AMORPHOUS STATE CRYSTAL DEFECT LEVEL PHOTOLUMINESCENCE LUMINESCENCE DECAY DOPING HYDROGENATION SECONDARY ION MASS SPECTROMETRY ELECTRON PARAMAGNETIC RESONANCE G FACTOR COMPENSATION OPTICAL ABSORPTION ELECTRICAL CONDUCTIVITY DENSITY OF STATES SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL83X0010056

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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