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A NEW LATERAL SELECTIVE-AREA GROWTH BY LIQUID-PHASE EPITAXY: THE FORMATION OF A LATERAL DOUBLE-BARRIER BURIED-HETEROSTRUCTURE LASER

Author
TSANG WT; LOGAN RA; VAN DER ZIEL JP
BELL LABORATORIES/MURRAY HILL 07974/USA
Source
APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 11; PP. 942-944; BIBL. 9 REF.
Document type
Article
Language
English
Keyword (fr)
COMPOSE MINERAL METHODE EN SOLUTION COMPOSITION CHIMIQUE MECANISME CROISSANCE ETUDE EXPERIMENTALE LASER LASER SEMICONDUCTEUR HETEROJONCTION COUCHE ENTERREE COUCHE EPITAXIQUE CROISSANCE CRISTALLINE GALLIUM ARSENIURE ALUMINIUM GALLIUM ARSENIURE MIXTE CRISTALLOGRAPHIE OPTIQUE
Keyword (en)
INORGANIC COMPOUND GROWTH FROM SOLUTION CHEMICAL COMPOSITION GROWTH MECHANISM EXPERIMENTAL STUDY LASER SEMICONDUCTOR LASER HETEROJUNCTION BURIED LAYER EPITAXIAL FILM CRYSTAL GROWTH GALLIUM ARSENIDES ALUMINIUM GALLIUM ARSENIDES MIXED CRISTALLOGRAPHY OPTICS
Keyword (es)
CRISTALOGRAFIA OPTICA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography

Discipline
Physics of condensed state : structure, mechanical and thermal properties Theoretical physics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL83X0020244

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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