CARACTERISTIQUES ELECTRIQUES DE DIODES AU-SI(N) REALISEES APRES IRRADIATION PAR LASER
- Author
- PONPON JP; BUTTUNG E; SIFFERT P
CENT. RECH. NUCLEAIRES, GROUPE PHYSIQUE APPLICATIONS SEMICONDUCTEURS/STRASBOURG 67037/FRA - Source
- REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1982; VOL. 17; NO 10; PP. 687-692; ABS. ENG; BIBL. 26 REF.
- Document type
- Article
- Language
- French
- Keyword (fr)
- DIODE DIODE BARRIERE SCHOTTKY ELECTRODE OR SILICIUM IRRADIATION LASER CARACTERISTIQUE ELECTRIQUE DEGRADATION ANALYSE FONCTIONNEMENT ELECTRONIQUE
- Keyword (en)
- DIODE SCHOTTKY BARRIER DIODE ELECTRODES GOLD SILICON LASER IRRADIATION ELECTRICAL CHARACTERISTIC DEGRADATION OPERATION STUDY ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL83X0025771
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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