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DETERMINATION OF THE ELECTRICAL LEVEL OF VACANCY IN ELECTRON IRRADIATED P-TYPE SILICON

Author
MUKASHEV BN; FROLOV VV; KOLODIN LG
ACAD. SCI. KASAKH SSR/ALMA-ATA 480082/SUN
Source
PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1982; VOL. 91; NO 7; PP. 358-360; BIBL. 9 REF.
Document type
Article
Language
English
Keyword (fr)
LACUNE NIVEAU DEFAUT CRISTALLIN IRRADIATION ELECTRON SILICIUM PHYSIQUE SOLIDE
Keyword (en)
VACANCY CRYSTAL DEFECT LEVEL IRRADIATION ELECTRONS SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL83X0029966

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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