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CARACTERISATION DES MATERIAUX SEMICONDUCTEURS PAR PHOTOABSORPTION TRANSITOIRE D'UNE ONDE INFRAROUGE

Other title
CARACTERIZATION OF SEMICONDUCTING MATERIALS BY TRANSIENT PHOTOABSORPTION OF IR RADIATION (en)
Author
FARAH JOSEPH
Source
FRA; DA. 1982; 147 P.; 30 CM; BIBL. 32 REF.; TH. 3E CYCLE: ELECTRON. ELECTROTECH. AUTOM./TOULOUSE 3/1982/2672
Document type
Thesis
Language
French
Keyword (fr)
ABSORPTION IR PHENOMENE TRANSITOIRE DUREE VIE PORTEUR LIBRE METHODE MESURE INJECTION PORTEUR CHARGE PAIRE ELECTRON TROU SILICIUM GALLIUM ARSENIURE GERMANIUM PHYSIQUE SOLIDE
Keyword (en)
INFRARED ABSORPTION TRANSIENTS LIFETIME FREE CARRIER MEASUREMENT METHOD CHARGE CARRIER INJECTION ELECTRON HOLE PAIR SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL83X0031756

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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