COMPOSITE OXIDE FILMS FORMED BY DE PLASMA ANODIZATION OF AL/GAAS
- Author
- PU NF; ROBINSON GY
UNIV. MINNESOTA, DEP. ELECTR. ENG./MINNEAPOLIS MN 55455/USA - Source
- J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 53; NO 1; PP. 416-420; BIBL. 17 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- ETUDE EXPERIMENTALE COMPOSE MINERAL CONDENSATION PLASMA OXYDATION ANODIQUE DIODE STRUCTURE MOS ETAT ELECTRONIQUE INTERFACE SPECTROMETRIE AUGER METAL CROISSANCE CRISTALLINE COUCHE MINCE ALUMINIUM OXYDE CARACTERISTIQUE COURANT TENSION CARACTERISTIQUE CAPACITE TENSION OXYDE NAISANT SUPPORT GAAS CRISTALLOGRAPHIE ELECTRONIQUE
- Keyword (en)
- EXPERIMENTAL STUDY INORGANIC COMPOUND PLASMA CONDENSATION ANODIZATION DIODE MOS STRUCTURE INTERFACE ELECTRON STATE AUGER ELECTRON SPECTROMETRY METAL CRYSTAL GROWTH THIN FILM ALUMINIUM OXIDES ALUMINIUM CRISTALLOGRAPHY ELECTRONICS
- Keyword (es)
- CRISTALOGRAFIA ELECTRONICA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Electronics Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL83X0034163
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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