INTERNAL SCHOTTKY BARRIERS IN SEMICONDUCTORS
- Author
- WEICHMAN FL
UNIV. ALBERTA, DEP. PHYS./EDMONTON AB T6G 2J1/CAN - Source
- CAN. J. PHYS.; ISSN 0008-4204; CAN; DA. 1982; VOL. 60; NO 3; PP. 269-272; ABS. FRE; BIBL. 17 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- METAL TRANSITION COMPOSE BARRIERE SCHOTTKY CONDUCTIVITE ELECTRIQUE INCLUSION SOLIDE CONTACT REDRESSEUR COUCHE APPAUVRISSEMENT ENERGIE ACTIVATION CUIVRE OXYDE INCLUSION METALLIQUE IMPURETE CUIVRE PHYSIQUE SOLIDE
- Keyword (en)
- TRANSITION METAL COMPOUNDS SCHOTTKY BARRIER ELECTRICAL CONDUCTIVITY SOLID INCLUSION RECTIFYING CONTACT DEPLETION LAYER ACTIVATION ENERGY SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL83X0059841
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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