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DETERMINATION OF TWO DONOR (MAJORITY) LEVELS IN SEMICONDUCTORS FROM HALL EFFECT MEASUREMENTS

Author
ZIEGLER E; SIEGEL W
BERGAKAD. FREIBERG, SEKT. PHYSICS/FREIBERG 9200/DDR
Source
CRYST. RES. TECHNOL. (1979); ISSN 0232-1300; DDR; DA. 1982; VOL. 17; NO 8; PP. 1015-1024; BIBL. 7 REF.
Document type
Article
Language
English
Keyword (fr)
NIVEAU IMPURETE CENTRE DONNEUR ENERGIE ACTIVATION EFFET HALL CONCENTRATION PORTEUR CHARGE SEMICONDUCTEUR MODELE MATHEMATIQUE GALLIUM PHOSPHURE SOUFRE SILICIUM PHYSIQUE SOLIDE
Keyword (en)
IMPURITY LEVEL DONOR CENTER ACTIVATION ENERGY HALL EFFECT CHARGE CARRIER CONCENTRATION SEMICONDUCTOR MATERIALS MATHEMATICAL MODEL SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL83X0069031

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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