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CARACTERISATION DES DEFAUTS DANS LES STRUCTURES MOS PAR ETUDE DE TRANSITOIRES PERIODIQUES

Other title
CHARACTERIZATION OF FAULTS IN MOS STRUCTURES BY THE STUDY OF PERIODIC TRANSIENTS (en)
Author
GALLATI MARIE HELENE
Source
FRA; DA. 1982; 121 P.; 30 CM; BIBL. 2 P.; TH. DOCT.-ING./LILLE 1/1982
Document type
Thesis
Language
French
Keyword (fr)
STRUCTURE MOS CAPACITE MOS REGIME STATIQUE REGIME DYNAMIQUE REGIME TRANSITOIRE CARACTERISTIQUE CAPACITE TENSION ETAT ELECTRONIQUE INTERFACE SPECTROMETRIE TRANSITOIRE NIVEAU PROFOND DEFAUT CRISTALLIN PORTEUR CHARGE DUREE VIE INTERFACE SOLIDE SOLIDE ELECTRONIQUE
Keyword (en)
MOS STRUCTURE MOS CAPACITY STATIC CONDITIONS DYNAMIC CONDITIONS UNSTEADY STATE VOLTAGE CAPACITY CURVE INTERFACE ELECTRON STATE DEEP LEVEL TRANSIENT SPECTROMETRY CRYSTAL DEFECT CHARGE CARRIER LIFETIME SOLID SOLID INTERFACE ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL83X0078970

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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