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FORMATION AND SCHOTTKY BEHAVIOR OF MANGANESE SILICIDES ON N-TYPES SILICON

Author
EIZENBERG M; TU KN
IBM T.J. WATSON RES. CENT./YORKTOWN HEIGHTS NY 10598/USA
Source
J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 6885-6890; BIBL. 26 REF.
Document type
Article
Language
English
Keyword (fr)
CONTACT ELECTRIQUE CONTACT ISOLANT SEMICONDUCTEUR BARRIERE SCHOTTKY MANGANESE SILICIURE SILICIUM HAUTEUR BARRIERE DIFFRACTION RX ELECTRONIQUE
Keyword (en)
ELECTRIC CONTACT SEMICONDUCTOR INSULATOR CONTACT SCHOTTKY BARRIER MANGANESE SILICIDES SILICON BARRIER HEIGHT X RAY DIFFRACTION ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL83X0079007

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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