MEASUREMENT OF J/V CHARACTERISTICS OF A GAAS SUBMICRON N+-N--N+ DIODE
- Author
- HOLLIS MA; EASTMAN LF; WOOD CEC
CORNELL UNIV., SCH. ELECTR. ENG./ITHACA NY 14853/USA - Source
- ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 3; PP. 570-572; BIBL. 7 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- DIODE CARACTERISTIQUE COURANT TENSION GALLIUM ARSENIURE MESURE BASSE TEMPERATURE TEMPERATURE ELECTRON PHENOMENE TRANSPORT STRUCTURE N+ N- N+ DIMENSION INFERIEURE AU MICRON ELECTRONIQUE
- Keyword (en)
- DIODE VOLTAGE CURRENT CURVE GALLIUM ARSENIDES MEASUREMENT LOW TEMPERATURE TEMPERATURE ELECTRONS TRANSPORT PROCESS ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL83X0103922
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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