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FORMATION OF N-LAYER IN IN0.53GA0.47AS BY SI IMPLANTATION

Author
KAWATA H; NISHI H; BAMBA Y; SAKURAI T; HASHIMOTO H
FUJITSU LAB./NAKAHARA-KU KAWASAKI 211/JPN
Source
JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 7; PP. 431-433; BIBL. 6 REF.
Document type
Article
Language
English
Keyword (fr)
ETUDE EXPERIMENTALE COMPOSE MINERAL METHODE PHASE LIQUIDE CANALISATION PARTICULE RETRODIFFUSION RUTHERFORD CONDUCTIVITE TYPE N MOYENNE ENERGIE HETEROEPITAXIE RECUIT THERMIQUE DOPAGE COUCHE EPITAXIQUE IMPLANTATION ION GALLIUM INDIUM ARSENIURE MIXTE SUPPORT INP IMPURETE CADMIUM IMPURETE SILICIUM RETRODIFFUSION HYDROGENE ION ATOMIQUE CRISTALLOGRAPHIE
Keyword (en)
EXPERIMENTAL STUDY INORGANIC COMPOUND GROWTH FROM LIQUID CHANNELING RUTHERFORD BACKSCATTERING N TYPE CONDUCTIVITY INTERMEDIATE ENERGY HETEROEPITAXY THERMAL ANNEALING DOPING EPITAXIAL FILM ION IMPLANTATION GALLIUM INDIUM ARSENIDES MIXED CRISTALLOGRAPHY
Keyword (es)
CRISTALOGRAFIA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL83X0111573

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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