THEORY OF THE MOBILITY OF ELECTRONS IN A SEMICONDUCTING-SURFACE INVERSION LAYER
- Author
- LAI WY; TING CS
UNIV. HOUSTON, DEP. PHYS./HOUSTON TX 77004/USA - Source
- PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 12; PP. 7206-7209; BIBL. 10 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- COUCHE INVERSION MOBILITE PORTEUR CHARGE EQUATION BOLTZMANN FONCTION MEMOIRE SILICIUM PHYSIQUE SOLIDE
- Keyword (en)
- INVERSION LAYER CHARGE CARRIER MOBILITY BOLTZMANN EQUATION MEMORY FUNCTION SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL83X0132456
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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