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FORMATION OF DEFECTS IN THE PROCESS OF ION IMPLANTATION INTO A3B5

Author
MAKSIMOV SK; PITIRMOVA EA; PAVLOV PV
MOSCOW INST. ELECTRONIC TECHNOLOGY/MOSCOW 103498/SUN
Source
RADIAT. EFF.; ISSN 0033-7579; GBR; DA. 1982; VOL. 66; NO 1-2; PP. 95-100; BIBL. 6 REF.
Document type
Article
Language
English
Keyword (fr)
COMPOSE III-V COMPOSE MINERAL SOUS STRUCTURE DISLOCATION DEFAUT PONCTUEL AMAS DEFAUT CRISTALLIN RECUIT MICROSCOPIE ELECTRONIQUE TRANSMISSION PRECIPITE IMPLANTATION ION IRRADIATION ION DEFAUT IRRADIATION GALLIUM ARSENIURE INDIUM ANTIMONIURE CARBONE ION ATOMIQUE MAGNESIUM ION ATOMIQUE CRISTALLOGRAPHIE
Keyword (en)
III-V COMPOUND INORGANIC COMPOUND SUBSTRUCTURE DISLOCATION POINT DEFECT CRYSTAL DEFECT CLUSTER ANNEALING TRANSMISSION ELECTRON MICROSCOPY PRECIPITATE ION IMPLANTATION ION IRRADIATION IRRADIATION DEFECT GALLIUM ARSENIDES INDIUM ANTIMONIDES CRISTALLOGRAPHY
Keyword (es)
CRISTALOGRAFIA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL83X0135992

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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