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A DESCRIPTION OF MOS INTERNODAL CAPACITANCES FOR TRANSIENT SIMULATIONS

Author
TAYLOR GW; FICHTNER W; SIMMONS JG
BELL LAB./MURRAY HILL NJ 07974/USA
Source
IEEE TRANS. COMPUT.-AIDED DES. INTEGR. CIRCUITS SYST.; ISSN 50629X; USA; DA. 1982; VOL. 1; NO 4; PP. 150-156; BIBL. 9 REF.
Document type
Article
Language
English
Keyword (fr)
TRANSISTOR EFFET CHAMP TRANSISTOR MOS CANAL TRANSISTOR SIMULATION CAPACITE ELECTRIQUE CARACTERISTIQUE CHARGE TENSION ELECTRONIQUE
Keyword (en)
FIELD EFFECT TRANSISTOR MOS TRANSISTOR TRANSISTOR CHANNEL SIMULATION CAPACITANCE ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL83X0157432

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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