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A NEW METHOD FOR CALCULATING NON-IDEAL POINT DEFECT INDUCED ELECTRONIC STRUCTURE: APPLICATION TO GAAS1-XPX: 0

Author
SINGH J; MADHUKAR A
UNIV. SOUTHERN CALIFORNIA, DEP. PHYS./LOS ANGELES CA 90007/USA
Source
SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 41; NO 12; PP. 947-950; BIBL. 14 REF.
Document type
Article
Language
English
Keyword (fr)
NIVEAU IMPURETE STRUCTURE ELECTRONIQUE NIVEAU PROFOND HAMILTONIEN FONCTION GREEN COMPOSITION CHIMIQUE METHODE CALCUL GALLIUM PHOSPHOARSENIURE GALLIUM PHOSPHURE GALLIUM ARSENIURE IMPURETE OXYGENE PHYSIQUE SOLIDE
Keyword (en)
IMPURITY LEVEL ELECTRONIC STRUCTURE DEEP LEVEL HAMILTONIAN GREEN FUNCTION CHEMICAL COMPOSITION CALCULATING METHOD SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL83X0175503

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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