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ELECTRICAL AND OPTICAL CHARACTERISTICS OF A SCHOTTKY BARRIER ON A CLEAVED SURFACE OF THE LAYERED SEMICONDUCTEUR INSE

Author
HASEGAWA Y; ABE Y
HOKKAIDO UNIV., DEP. NUCLEAR ENG./SAPPORO 060/JPN
Source
PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 70; NO 2; PP. 615-621; ABS. GER; BIBL. 10 REF.
Document type
Article
Language
English
Keyword (fr)
CONTACT ELECTRIQUE CONTACT METAL SEMICONDUCTEUR OR INDIUM SELENIURE BARRIERE SCHOTTKY CAPACITE ELECTRIQUE FREQUENCE DIODE BARRIERE SCHOTTKY CARACTERISTIQUE COURANT TENSION TEMPERATURE PIEGEAGE PORTEUR CHARGE CARACTERISTIQUE CAPACITE TENSION ELECTRONIQUE
Keyword (en)
ELECTRIC CONTACT SEMICONDUCTOR METAL CONTACT GOLD INDIUM SELENIDES SCHOTTKY BARRIER CAPACITANCE FREQUENCY SCHOTTKY BARRIER DIODE VOLTAGE CURRENT CURVE TEMPERATURE CHARGE CARRIER TRAPPING VOLTAGE CAPACITY CURVE ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL83X0235502

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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