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A THEORETICAL ANALYSIS OF THE RELAXATION OF AN OPEN-CIRCUIT PHOTOPOTENTIAL IN A HIGHLY BIASED N-TYPE SEMICONDUCTOR ELECTRODE. I: NO INTERFACIAL ELECTRON OR HOLE TRANSFER

Author
GOTTESFELD S; FELDBERG SW
UNIV. TEL-AVIV, DEP. CHEMISTRY/RAMAT AVIV/ISR
Source
JOURNAL OF ELECTROANALYTICAL CHEMISTRY AND INTERFACIAL ELECTROCHEMISTRY; ISSN 0022-0728; CHE; DA. 1983; VOL. 146; NO 1; PP. 47-69; BIBL. 14 REF.
Document type
Article
Language
English
Keyword (fr)
PHOTOELECTROCHIMIE ETUDE THEORIQUE RELAXATION COURANT PHOTOELECTRIQUE ELECTRODE SEMICONDUCTEUR CONDUCTIVITE TYPE N TENSION ELECTRIQUE ELECTROCHIMIE CHIMIE PHYSIQUE CHIMIE GENERALE
Keyword (en)
PHOTOELECTROCHEMISTRY THEORETICAL STUDY RELAXATION PHOTOELECTRIC CURRENT ELECTRODES SEMICONDUCTOR MATERIALS N TYPE CONDUCTIVITY VOLTAGE ELECTROCHEMISTRY PHYSICAL CHEMISTRY GENERAL CHEMISTRY
Keyword (es)
ELECTROQUIMICA QUIMICA FISICA QUIMICA GENERAL
Classification
Pascal
001 Exact sciences and technology / 001C Chemistry / 001C01 General and physical chemistry

Discipline
General chemistry and physical chemistry
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL83X0278301

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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