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EDGE EFFECTS IN GLASS-PASSIVATED COLLECTOR-BASE JUNCTIONS OF HIGH-VOLTAGE TRANSISTORS

Author
SAVINI A; DALLAGO E; FELICI M; PANIGADA M; VERSIGLIA F
UNIV., IST. ELETROTTEC./PAVIA 27100/ITA
Source
IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 3; PP. 116-120; BIBL. 19 REF.
Document type
Article
Language
English
Keyword (fr)
TRANSISTOR HAUTE TENSION VERRE JONCTION EFFET BORD METHODE ELEMENT FINI SIMULATION METHODE CALCUL ELECTRONIQUE
Keyword (en)
TRANSISTOR HIGH VOLTAGE GLASS JUNCTION EDGE EFFECT FINITE ELEMENT METHOD SIMULATION CALCULATING METHOD ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL83X0288908

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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