EDGE EFFECTS IN GLASS-PASSIVATED COLLECTOR-BASE JUNCTIONS OF HIGH-VOLTAGE TRANSISTORS
- Author
- SAVINI A; DALLAGO E; FELICI M; PANIGADA M; VERSIGLIA F
UNIV., IST. ELETROTTEC./PAVIA 27100/ITA - Source
- IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 3; PP. 116-120; BIBL. 19 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- TRANSISTOR HAUTE TENSION VERRE JONCTION EFFET BORD METHODE ELEMENT FINI SIMULATION METHODE CALCUL ELECTRONIQUE
- Keyword (en)
- TRANSISTOR HIGH VOLTAGE GLASS JUNCTION EDGE EFFECT FINITE ELEMENT METHOD SIMULATION CALCULATING METHOD ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL83X0288908
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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