DEFECT PRODUCTION AND LIFETIME CONTROL IN ELECTRON AND GAMMA -IRRADIATED SILICON
- Author
- BROTHERTON SD; BRADLEY P
PHILIPS RESEARCH LABORATORIES/REDHILL SURREY RH1 5HA/GBR - Source
- JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 8; PP. 5720-5732; BIBL. 33 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- NON METAL DEFAUT PONCTUEL DIODE BARRIERE SCHOTTKY DIODE COUCHE INTRINSEQUE SPECTROMETRIE TRANSITOIRE NIVEAU PROFOND ETUDE EXPERIMENTALE IRRADIATION ELECTRON RAYONNEMENT GAMMA DUREE VIE DEFAUT IRRADIATION IRRADIATION ELECTRON IRRADIATION GAMMA SILICIUM CRISTALLOGRAPHIE ELECTRONIQUE
- Keyword (en)
- NON METAL POINT DEFECT SCHOTTKY BARRIER DIODE P I N DIODE DEEP LEVEL TRANSIENT SPECTROMETRY EXPERIMENTAL STUDY IRRADIATION ELECTRONS GAMMA RADIATION LIFETIME IRRADIATION DEFECT ELECTRON IRRADIATION GAMMA IRRADIATION SILICON CRISTALLOGRAPHY ELECTRONICS
- Keyword (es)
- CRISTALOGRAFIA ELECTRONICA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Electronics Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL83X0305952
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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