ETUDE THEORIQUE DES DEFAUTS DE SURFACE DES SEMICONDUCTEURS ET DES COMPOSES SIOX
- Other title
- THEORETICAL STUDY OF SURFACE DEFECTS IN SEMICONDUCTORS AND SIOX COMPOUNDS (en)
- Author
- LOHEZ DOMINIQUE
- Source
- FRA; DA. 1982; 228 F.; 30 CM; BIBL. 124 REF.; TH.: SCI. PHYS./LILLE 1/1982/552
- Document type
- Thesis
- Language
- French
- Keyword (fr)
- STRUCTURE ELECTRONIQUE METHODE LCAO MO ETAT ELECTRONIQUE SURFACE INTERFACE DENSITE ETAT MODELE MATHEMATIQUE FONCTION GREEN SURFACE DEFAUT CRISTALLIN ELEMENT GROUPE IV COMPOSE III V COMPOSE IV VI SILICIUM OXYDE GALLIUM ARSENIURE PHYSIQUE SOLIDE
- Keyword (en)
- ELECTRONIC STRUCTURE LCAO MO METHOD SURFACE ELECTRON STATE INTERFACE DENSITY OF STATES MATHEMATICAL MODEL GREEN FUNCTION SURFACE CRYSTAL DEFECT SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL83X0321436
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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