A NOVEL P-N JUNCTION POLYCRYSTALLINE SILICON GATE MOSFET
- Author
- ANAND KV; CHAMBERLAIN SG
UNIV. WATERLOO, DEP. ELECTRICAL ENG./WATERLOO ON N2L 3G1/CAN - Source
- INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 54; NO 2; PP. 287-298; BIBL. 9 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- TRANSISTOR EFFET CHAMP TRANSISTOR MOS GRILLE JONCTION P N POLYCRISTAL SILICIUM FABRICATION ANALYSE FONCTIONNEMENT TRANSISTOR EFFET CHAMP GRILLE MULTIPLE ELECTRONIQUE
- Keyword (en)
- FIELD EFFECT TRANSISTOR MOS TRANSISTOR GRID P N JUNCTION POLYCRYSTAL SILICON MANUFACTURING OPERATION STUDY ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL83X0359615
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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