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COMPARISON OF THE DISPERSION PARAMETERS FROM TIME-OF-FLIGHT AND PHOTO-INDUCED MIDGAP ABSORPTION MEASUREMENTS ON SPUTTERED A-SI: H

Author
KIRBY PB; PAUL W; RAY S; TAUC J
HARVARD UNIV., DIVISION APPLIED SCI./CAMBRIDGE MA 02138/USA
Source
SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 42; NO 7; PP. 533-535; BIBL. 11 REF.
Document type
Article
Language
English
Keyword (fr)
COUCHE MINCE PREPARATION IMPULSION REGIME TRANSITOIRE PHOTOCONDUCTIVITE ABSORPTION OPTIQUE MOBILITE PORTEUR CHARGE RECOMBINAISON PORTEUR CHARGE PIEGEAGE PORTEUR CHARGE ETAT AMORPHE SILICIUM IMPURETE PULVERISATION CATHODIQUE ABSORPTION OPTIQUE PHOTOINDUITE IMPURETE HYDROGENE PHYSIQUE SOLIDE
Keyword (en)
THIN FILM PREPARATION IMPULSE UNSTEADY STATE PHOTOCONDUCTIVITY OPTICAL ABSORPTION CHARGE CARRIER MOBILITY CHARGE CARRIER RECOMBINATION CHARGE CARRIER TRAPPING AMORPHOUS STATE SILICON IMPURITY CATHODIC SPUTTERING SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL83X0380318

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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