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DRY ETCHING TECHNOLOGY FOR 1-MU M VLSI FABRICATION

Author
HIRATA K; OZAKI Y; ODA M; KIMIZUKA M
NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORP./MUSASHINO-SHI TOKYO 180/JPN
Source
IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1323-1331; BIBL. 12 REF.
Document type
Article
Language
English
Keyword (fr)
FABRICATION MICROELECTRONIQUE GRAVURE PROCEDE VOIE SECHE CIRCUIT INTEGRE CIRCUIT VLSI ELECTRONIQUE
Keyword (en)
MICROELECTRONIC FABRICATION ENGRAVING DRY PROCESS INTEGRATED CIRCUIT VLSI CIRCUIT ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL83X0380740

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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