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A SYSTEMATIC STUDY OF POSITRON LIFETIMES IN SEMICONDUCTORS

Author
DANNEFAER S
UNIV. AARHUS, INST. PHYS./AARHUS 8000/DNK
Source
JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 3; PP. 599-605; BIBL. 22 REF.
Document type
Article
Language
English
Keyword (fr)
DUREE VIE POSITON SEMICONDUCTEUR ANNIHILATION POSITON STRUCTURE BANDE SILICIUM GERMANIUM ETAIN GALLIUM PHOSPHURE GALLIUM ARSENIURE GALLIUM ANTIMONIURE INDIUM PHOSPHURE INDIUM ANTIMONIURE CADMIUM TELLURURE DIAMANT SILICIUM CARBURE IMPURETE IMPURETE SILICIUM IMPURETE CADMIUM IMPURETE CHROME PHYSIQUE SOLIDE
Keyword (en)
LIFETIME POSITRON SEMICONDUCTOR MATERIALS POSITRON ANNIHILATION BAND STRUCTURE SILICON GERMANIUM TIN GALLIUM PHOSPHIDES GALLIUM ARSENIDES GALLIUM ANTIMONIDES INDIUM PHOSPHIDES INDIUM ANTIMONIDES CADMIUM TELLURIDES DIAMOND SILICON CARBIDES IMPURITY SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL83X0382044

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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