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THERMAL EMISSION RATES AND CAPTURE CROSS-SECTION OF MAJORITY CARRIERS AT TITANIUM LEVELS IN SILICON

Author
MORANTE JR; CARCELLER JE; CARTUJO P; BARBOLLA J
UNIV. BARCELONA, FAC. FISICA, DEP. ELECTRICIDAD ELECTRONICA/ESP
Source
SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 1; PP. 1-6; BIBL. 23 REF.
Document type
Article
Language
English
Keyword (fr)
JONCTION JONCTION P+ N JONCTION N N+ SILICIUM IMPURETE PIEGEAGE PORTEUR CHARGE COUCHE APPAUVRISSEMENT IMPURETE TITANE EMISSION THERMIQUE ELECTRONIQUE
Keyword (en)
JUNCTION P+ N JUNCTION N N+ JUNCTION SILICON IMPURITY CHARGE CARRIER TRAPPING DEPLETION LAYER ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL83X0398565

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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