THE EFFECT OF TRIMETHYLALUMINUM CONCENTRATION ON THE INCORPORATION OF P IN ALXGA1-XPYAD1-Y GROWN BY ORGANOMETALLIC VAPOR PHASE EPITAXY
- Author
- LUDOWISE MJ; DIETZE WT
VARIAN ASSOCIATES INC./PALO ALTO CA 94303/USA - Source
- JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 1; PP. 59-73; BIBL. 12 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- ALUMINIUM GALLIUM PHOSPHOARSENIURE MIXTE COUCHE EPITAXIQUE CROISSANCE CRISTALLINE DEPOT CHIMIQUE PHASE VAPEUR COMPOSITION CHIMIQUE CRISTALLOGRAPHIE
- Keyword (en)
- ALUMINIUM GALLIUM ARSENIDES PHOSPHIDES MIXED EPITAXIAL FILM CRYSTAL GROWTH CHEMICAL VAPOR DEPOSITION CHEMICAL COMPOSITION CRISTALLOGRAPHY
- Keyword (es)
- CRISTALOGRAFIA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL83X0410619
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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