MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS SILICON BY SPACE CHARGE SPECTROSCOPY
- Author
- LANG DV; COHEN JD; HARBISON JP
BELL LABORATORIES/MURRAY HILL NJ 07974/USA - Source
- PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 8; PP. 5285-5320; BIBL. 70 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- DENSITE ETAT ETAT AMORPHE IMPURETE CHARGE ESPACE JONCTION DOPAGE NIVEAU IMPURETE ETAT ELECTRONIQUE SURFACE PROPRIETE OPTIQUE PHENOMENE TRANSPORT SILICIUM IMPURETE HYDROGENE IMPURETE PHOSPHORE PHYSIQUE SOLIDE
- Keyword (en)
- DENSITY OF STATES AMORPHOUS STATE IMPURITY SPACE CHARGE JUNCTION DOPING IMPURITY LEVEL SURFACE ELECTRON STATE OPTICAL PROPERTIES TRANSPORT PROCESS SILICON SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL83X0416490
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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