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A THEORY OF CAPACITANCE-VOLTAGE MEASUREMENTS ON AMORPHOUS SILICON SCHOTTKY BARRIERS

Author
ABRAM RA; DOHERTY PJ
UNIV. DURHAM, DEP. APPLIED PHYS. ELECTRON./DURHAM/GBR
Source
PHILOSOPHICAL MAGAZINE. B. ELECTRONIC, OPTICAL AND MAGNETIC PROPERTIES; ISSN 0141-8637; GBR; DA. 1982; VOL. 45; NO 2; PP. 167-176; BIBL. 5 REF.
Document type
Article
Language
English
Keyword (fr)
CONTACT ELECTRIQUE BARRIERE SCHOTTKY CARACTERISTIQUE CAPACITE TENSION SILICIUM ETAT AMORPHE ELECTRONIQUE
Keyword (en)
ELECTRIC CONTACT SCHOTTKY BARRIER VOLTAGE CAPACITY CURVE SILICON AMORPHOUS STATE ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL83X0423878

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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