A THEORY OF CAPACITANCE-VOLTAGE MEASUREMENTS ON AMORPHOUS SILICON SCHOTTKY BARRIERS
- Author
- ABRAM RA; DOHERTY PJ
UNIV. DURHAM, DEP. APPLIED PHYS. ELECTRON./DURHAM/GBR - Source
- PHILOSOPHICAL MAGAZINE. B. ELECTRONIC, OPTICAL AND MAGNETIC PROPERTIES; ISSN 0141-8637; GBR; DA. 1982; VOL. 45; NO 2; PP. 167-176; BIBL. 5 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- CONTACT ELECTRIQUE BARRIERE SCHOTTKY CARACTERISTIQUE CAPACITE TENSION SILICIUM ETAT AMORPHE ELECTRONIQUE
- Keyword (en)
- ELECTRIC CONTACT SCHOTTKY BARRIER VOLTAGE CAPACITY CURVE SILICON AMORPHOUS STATE ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL83X0423878
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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