ELECTRICAL CHARACTERIZATION OF AL-SIO2-SI (N-TYPE) TUNNEL STRUCTURES. INFLUENCE OF LPCVD AND LPO2 OXIDE GROWTH TECHNOLOGIES ON THE PROPERTIES OF THE SI-SIO2 INTERFACE
- Author
- PANANAKAKIS G; KAMARINOS G; EL SAYED M; LE GOASCOZ V
LAB. PHYSIQUE COMPOSANTS SEMICONDUCTEURS/GRENOBLE 38031/FRA - Source
- SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 5; PP. 415-426; BIBL. 37 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- STRUCTURE MOS EFFET TUNNEL ELECTRONIQUE
- Keyword (en)
- MOS STRUCTURE TUNNEL EFFECT ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL83X0434514
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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