OHMIC CONTACT PROPERTIES OF MAGNESIUM EVAPORATED ONTO UNDOPED UND A-DOPED A-SI: H
- Author
- MATSUURA H; OKUNO T; OKUSHI H; YAMASAKI S; MATSUDA A; HATA N; OHEDA H; TANAKA K
ELECTROTECH. LAB./IBARAKI 305/JPN - Source
- JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 3; PART. 2; PP. L197-L199; BIBL. 9 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- CONTACT ELECTRIQUE CONTACT OHMIQUE CARACTERISTIQUE COURANT TENSION SILICIUM ETAT AMORPHE IMPURETE CONTACT METAL SEMICONDUCTEUR MAGNESIUM IMPURETE PHOSPHORE ELECTRONIQUE
- Keyword (en)
- ELECTRIC CONTACT OHMIC CONTACT VOLTAGE CURRENT CURVE SILICON AMORPHOUS STATE IMPURITY SEMICONDUCTOR METAL CONTACT MAGNESIUM ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL83X0460557
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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