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OHMIC CONTACT PROPERTIES OF MAGNESIUM EVAPORATED ONTO UNDOPED UND A-DOPED A-SI: H

Author
MATSUURA H; OKUNO T; OKUSHI H; YAMASAKI S; MATSUDA A; HATA N; OHEDA H; TANAKA K
ELECTROTECH. LAB./IBARAKI 305/JPN
Source
JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 3; PART. 2; PP. L197-L199; BIBL. 9 REF.
Document type
Article
Language
English
Keyword (fr)
CONTACT ELECTRIQUE CONTACT OHMIQUE CARACTERISTIQUE COURANT TENSION SILICIUM ETAT AMORPHE IMPURETE CONTACT METAL SEMICONDUCTEUR MAGNESIUM IMPURETE PHOSPHORE ELECTRONIQUE
Keyword (en)
ELECTRIC CONTACT OHMIC CONTACT VOLTAGE CURRENT CURVE SILICON AMORPHOUS STATE IMPURITY SEMICONDUCTOR METAL CONTACT MAGNESIUM ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL83X0460557

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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