MEASUREMENTS OF THE OPEN-CIRCUIT PHOTOVOLTAGE DECAY IN A SILICON SOLAR CELL
- Author
- MADAN MK; TEWARY VK
BIRLA INST. TECHNOLOGY SCI./PILANI 333031/IND - Source
- SOLAR CELLS; ISSN 0379-6787; CHE; DA. 1983; VOL. 9; NO 4; PP. 289-293; BIBL. 6 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- ENERGIE SOLAIRE EQUIPEMENT CELLULE SOLAIRE JONCTION P N DECLIN ETUDE EXPERIMENTALE PORTEUR MINORITAIRE DUREE VIE MATERIAU PARAMETRE EVALUATION INDE METHODE MESURE DISPOSITIF PHOTOELECTRIQUE SILICIUM TENSION CIRCUIT OUVERT ENERGIE ELECTRONIQUE
- Keyword (en)
- SOLAR ENERGY EQUIPMENT SOLAR CELL P N JUNCTION DECAY EXPERIMENTAL STUDY MINORITY CARRIER LIFETIME MATERIALS PARAMETER EVALUATION INDIA MEASUREMENT METHOD PHOTOELECTRIC CELL SILICON ENERGY ELECTRONICS
- Keyword (es)
- ENERGIA ELECTRONICA
- Classification
- Discipline
- Electronics Energy
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL83X0483912
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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